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| inchange semiconductor product specification silicon npn power transistors BD809 description ? ? with to-220c package ? complement to type bd810 ? dc current gain : h fe = 30 (min) @ i c = 2.0 adc applications ? designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 80 v v ceo collector-emitter voltage open base 80 v v ebo emitter-base voltage open collector 5 v i c collector current 10 a i b base current 6 a p d total power dissipation t c =25 ?? 90 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.39 ??/w
inchange semiconductor product specification 2 silicon npn power transistors BD809 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a; i b =0 80 v v cesat collector-emitter saturation voltage i c =3 a;i b =0.3 a 1.1 v v be base-emitter voltage i c =4a ; v ce =2v 1.6 v i cbo collector cut-off current v cb =80v; i e =0 1.0 ma i ebo emitter cut-off current v eb =5v; i c =0 2.0 ma h fe-1 dc current gain i c =2a ; v ce =2v 30 h fe-2 dc current gain i c =4a ; v ce =2v 15 f t transition frequency i c =1a ; v ce =10v;f=1.0mhz 1.5 mhz inchange semiconductor product specification 3 silicon npn power transistors BD809 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm) |
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